After unleashing its new Atom processor platform, Intel now takes a step forward with a new, finer 20nm process technology to manufacture NAND flash memory. This new 20nm process outs small size, high-capacity 8GB multi-level cell NAND flash device to store data on smartphones, tablets and computing systems.
Adding feature-rich enhancements to tablets and smartphones, it could create greater demand for NAND flash memory, providing larger space in smaller form factor. The 20nm 8GB device measuring 118mm2 touts to provide 30 to 40 percent reduction in board space. The reduction in the flash storage also offers higher system level efficiency for tablet and smartphone manufacturers.
“Close customer collaboration is one of Micron’s core values and through these efforts we are constantly uncovering compelling end-product design opportunities for NAND flash storage,” said Glen Hawk, vice president of Micron’s NAND Solutions Group. “Our innovation and growth opportunities continue with the 20nm NAND process, enabling Micron to deliver cost-effective, value-added solid-state storage solutions for our customers.”
“Our goal is to enable instant, affordable access to the world’s information,” said Tom Rampone, vice president and general manager, Intel Non-Volatile Memory Solutions Group. “Industry-leading NAND gives Intel the ability to provide the highest quality and most cost-effective solutions to our customers, generation after generation. The Intel-Micron joint venture is a model for the manufacturing industry as we continue to lead the industry in process technology and make quick transitions of our entire fab network to smaller and smaller lithographies.”
The all new 20nm 8GB device is a joint venture among IMFT, Intel and Micron. This latest 20nm process has maintained the performance and endurance of the previous generation 25nm NAND technology.
The 20nm, 8GB device is now in the sampling stage and will enter mass production during later half of 2011.
